Niall Tumilty<![CDATA[
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<div class="ed_pic_left"><img alt="唐奈歐" src="/userfiles/icstch/images/20260319181414728.jpg"></div>
<div class="ed_title01">Associate Professor</div>
<div class="ed_txt">Tele: +886-3-5712121 #55926<br>
Office: EF463<br>
E-mail:ntumilty@nycu.edu.tw<br>
<a href="https://widebandgap.lab.nycu.edu.tw/" id="1-2" title="Lab Website">Lab Website</a></div>
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<div class="ed-model18-title-text">Education</div>
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<td>2006.01 – 2010.03</td>
<td>PhD, Electrical and Electronic Engineering, University College London, UK</td>
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<td>2002.09 – 2005.07</td>
<td>BEng(Hons), Electrical and Electronic Engineering, Queens University Belfast, UK</td>
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<td>2025.08 – present</td>
<td>Associate Professor, International College of Semiconductor Technology, NYCU, Taiwan</td>
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<td>2020.08 – 2025.07</td>
<td>Assistant Professor, International College of Semiconductor Technology, National Chiao Tung University (NCTU), Taiwan</td>
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<td>2017.09 – 2020.07</td>
<td>Principle Engineer, Materials and Vacuum, Quantum Sensors, Teledyne-e2v, UK</td>
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<td>2012.01 – 2017.09</td>
<td>Photocathode Development Engineer, Electron Tubes Ltd, London, UK</td>
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<td>2010.04 – 2011.12</td>
<td>Post-doctoral Research Fellow, University College London , London Centre for Nanotechnology</td>
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<li class="content">hBN and graphene</li>
<li class="content">Doping 2D material</li>
<li class="content">DUV optoelectronics</li>
<li class="content">Ga2O3 material and device</li>
<li class="content">GaN material and device</li>
<li class="content">CVD diamond for device applications</li>
<li class="content">Thermal dissipation technologies</li>
<li class="content">Cubic boron nitride</li>
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<td>2024</td>
<td>HEA Fellow</td>
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<td>2024</td>
<td>Excellent Teaching Award</td>
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<td>2022</td>
<td>Functional Diamond Journal editorial board member</td>
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