[ 計畫徵才 ] Deposition of wide bandgap boron nitrides (h-BN and c-BN) via excimer laser annealing for betavoltaic and power devices applications including device fabrication

Topic:  Deposition of wide bandgap boron nitrides (h-BN and c-BN) via excimer laser annealing for betavoltaic and power devices applications including device fabrication.

 

Energy is essential to human life and all living organisms. Our energy choices and decisions impact the Earth’s natural systems in ways we may not be aware of, thereby making it essential to develop new and efficient means to generate power.

Betavoltaic devices operate in a similar fashion to photovoltaics, however instead of absorbing photons, a radioactive isotope (tritium) is typically located in close proximity to the device or directly embedded into the pn junction thereby creating a small power source.

 

This project is in collaboration with Distinguished Professor Ying-Hao Chu in the Material Science and Engineering department NYCU.

You may contact Prof. Niall for more information: ntumilty@nctu.edu.tw